• DocumentCode
    1446758
  • Title

    IGBT model validation

  • Author

    Berning, David W. ; Hefner, Allen R., Jr.

  • Author_Institution
    Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
  • Volume
    4
  • Issue
    6
  • fYear
    1998
  • Firstpage
    23
  • Lastpage
    34
  • Abstract
    Efforts to model the switching behavior of IGBTs have been greatly expanded. In many cases, circuit modeling has become an economic necessity because the cost of the components of a medium- to high-power circuit, and the load itself, is so high that all means available muse be used to lower the risk of system failure during both the prototyping phase of product development and production. As the physics that govern transistor behavior are quite complex, attempts at accurately predicting the details of transistor switching performance tax models to their extreme. Test procedures are needed to check the validity of predictions made by various models, and these procedures need to be applicable to commonly used circuits. It is particularly important that these test procedures are built around a test-bed that is well understood and well characterized so that the device model is given the correct information for the simulations. The details of a suitable test bed circuit that can be used for model-verification-related measurements on half bridge configured IGBTs are given. The NIST/IEEE Working Group on Model Validation has been established to address the need for testing the validity of various models as they relate to predicting the behavior of devices under realistic conditions. The work described in this article is performed, in part, to support the needs of the IGBT task of the Working Group
  • Keywords
    bridge circuits; circuit testing; insulated gate bipolar transistors; power semiconductor switches; semiconductor device models; semiconductor device testing; IGBT model validation; NIST/IEEE Working Group on Model Validation; circuit modeling; half bridge configured IGBT; high-power circuit; medium-power circuit; model-verification-related measurements; product development; switching behavior modelling; test bed circuit; test procedures; transistor behavior; Circuit simulation; Circuit testing; Costs; Economic forecasting; Insulated gate bipolar transistors; Physics; Predictive models; Product development; Production systems; Prototypes;
  • fLanguage
    English
  • Journal_Title
    Industry Applications Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1077-2618
  • Type

    jour

  • DOI
    10.1109/2943.730755
  • Filename
    730755