Title :
Improving Flash Wear-Leveling by Proactively Moving Static Data
Author :
Chang, Yuan-Hao ; Hsieh, Jen-Wei ; Kuo, Tei-Wei
Author_Institution :
Dept. of Comput. Sci. & Inf. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Motivated by the strong demand for flash memory with enhanced reliability, this work attempts to achieve improved flash-memory endurance without substantially increasing overhead and without excessively modifying popular implementation designs such as the flash translation layer protocol (FTL), NAND flash translation layer protocol (NFTL), and block-level flash translation layer protocol (BL). A wear-leveling mechanism for moving data that are not updated is proposed to distribute wear-leveling actions over the entire physical address space, so that static or rarely updated data can be proactively moved and memory-space requirements can be minimized. The properties of the mechanism are then explored with various implementation considerations. A series of experiments based on a realistic trace demonstrates the significantly improved endurance of FTL, NFTL, and BL with limited system overhead.
Keywords :
NAND circuits; flash memories; protocols; NAND flash translation layer protocol; block-level flash translation layer protocol; flash memory endurance; flash wear-leveling; Computer science; Costs; Embedded system; File systems; Flash memory; Hard disks; Hardware; Mechanical factors; Proposals; Protocols; System performance; Flash memory; endurance; reliability.; wear leveling;
Journal_Title :
Computers, IEEE Transactions on
DOI :
10.1109/TC.2009.134