• DocumentCode
    1446814
  • Title

    Improving Flash Wear-Leveling by Proactively Moving Static Data

  • Author

    Chang, Yuan-Hao ; Hsieh, Jen-Wei ; Kuo, Tei-Wei

  • Author_Institution
    Dept. of Comput. Sci. & Inf. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    59
  • Issue
    1
  • fYear
    2010
  • Firstpage
    53
  • Lastpage
    65
  • Abstract
    Motivated by the strong demand for flash memory with enhanced reliability, this work attempts to achieve improved flash-memory endurance without substantially increasing overhead and without excessively modifying popular implementation designs such as the flash translation layer protocol (FTL), NAND flash translation layer protocol (NFTL), and block-level flash translation layer protocol (BL). A wear-leveling mechanism for moving data that are not updated is proposed to distribute wear-leveling actions over the entire physical address space, so that static or rarely updated data can be proactively moved and memory-space requirements can be minimized. The properties of the mechanism are then explored with various implementation considerations. A series of experiments based on a realistic trace demonstrates the significantly improved endurance of FTL, NFTL, and BL with limited system overhead.
  • Keywords
    NAND circuits; flash memories; protocols; NAND flash translation layer protocol; block-level flash translation layer protocol; flash memory endurance; flash wear-leveling; Computer science; Costs; Embedded system; File systems; Flash memory; Hard disks; Hardware; Mechanical factors; Proposals; Protocols; System performance; Flash memory; endurance; reliability.; wear leveling;
  • fLanguage
    English
  • Journal_Title
    Computers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9340
  • Type

    jour

  • DOI
    10.1109/TC.2009.134
  • Filename
    5255228