Title :
The gate-controlled graphite p-n junction
Author :
Jingping Liu ; Huichang Zhao ; Safavi-Naeini, S. ; Dayan Ban
Author_Institution :
Sch. of Electron. & Opt. Eng., Nanjing Univ. of Sci. & Technol., Nanjing, China
Abstract :
The thin graphite p-n junction has been analyzed and measured. The Fermi level of graphite goes up and down with gate voltage rather than doping. The diffusion of majority carriers should overcome the electric repulsion force. Even though there are few charges between the n-type and the p-type graphite, the built-in potential is very low. This quasi spacecharge region mainly comes from the electric attraction and electric repulsion force. The Schottky barrier has been found between metal electrode and induced n-type graphite. These characteristics are useful to the research of graphene p-n junction and graphene device.
Keywords :
Fermi level; Schottky barriers; diffusion; electrodes; graphite; p-n junctions; C; Fermi level; Schottky barrier; diffusion; electric attraction; electric repulsion force; gate-controlled graphite p-n junction; metal electrode; n-type graphite; quasispace-charge region; Force; Graphene; Logic gates; Metals; P-n junctions; Schottky barriers; Schottky barrier; gate voltage; graphite; p-n junction;
Conference_Titel :
Information Science, Electronics and Electrical Engineering (ISEEE), 2014 International Conference on
Conference_Location :
Sapporo
Print_ISBN :
978-1-4799-3196-5
DOI :
10.1109/InfoSEEE.2014.6947836
