The gate-controlled graphite p-n junction

Author

Jingping Liu ; Huichang Zhao ; Safavi-Naeini, S. ; Dayan Ban

Author_Institution

Sch. of Electron. & Opt. Eng., Nanjing Univ. of Sci. & Technol., Nanjing, China

Volume

2

fYear

2014

fDate

26-28 April 2014

Firstpage

1082

Lastpage

1084

Abstract

The thin graphite p-n junction has been analyzed and measured. The Fermi level of graphite goes up and down with gate voltage rather than doping. The diffusion of majority carriers should overcome the electric repulsion force. Even though there are few charges between the n-type and the p-type graphite, the built-in potential is very low. This quasi spacecharge region mainly comes from the electric attraction and electric repulsion force. The Schottky barrier has been found between metal electrode and induced n-type graphite. These characteristics are useful to the research of graphene p-n junction and graphene device.

Keywords

Fermi level; Schottky barriers; diffusion; electrodes; graphite; p-n junctions; C; Fermi level; Schottky barrier; diffusion; electric attraction; electric repulsion force; gate-controlled graphite p-n junction; metal electrode; n-type graphite; quasispace-charge region; Force; Graphene; Logic gates; Metals; P-n junctions; Schottky barriers; Schottky barrier; gate voltage; graphite; p-n junction;

fLanguage

English

Publisher

ieee

Conference_Titel

Information Science, Electronics and Electrical Engineering (ISEEE), 2014 International Conference on

Conference_Location

Sapporo

Print_ISBN

978-1-4799-3196-5

Type

conf

DOI

10.1109/InfoSEEE.2014.6947836

Filename

6947836