• DocumentCode
    1447201
  • Title

    Relationship between thermal and luminance distributions in high-power lateral GaN/InGaN light-emitting diodes

  • Author

    Han, D.P. ; Shim, J.I. ; Shin, Dong Sik

  • Author_Institution
    Dept. of Electr. & Comput. Sci. Eng., Hanyang Univ., Ansan, South Korea
  • Volume
    46
  • Issue
    6
  • fYear
    2010
  • Firstpage
    437
  • Lastpage
    439
  • Abstract
    The relationship between the thermal and luminance distributions in high-power lateral GaN/InGaN light-emitting diodes (LEDs) is demonstrated. By using a three-dimensional electrical circuit model and experimentally measured thermal and luminance images of the LED chips, it is shown that thermal and luminance distributions have close correlation and that uniform current density is essential to improve the thermal and luminance properties of LED chips.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; GaN-InGaN; LED chips; light-emitting diodes; luminance distribution; thermal distribution; three-dimensional electrical circuit model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.2416
  • Filename
    5434633
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1447201