Title :
LDMOSFET with dielectric modulated drift region
Author :
Su, R.Y. ; Chiang, Patrick Yin ; Gong, Jianya
Author_Institution :
Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
The properties of LDMOSFETs with dielectric material (several pieces of STI) being inserted into the drift region of the transistor to modulate the one-dimensional electric field distribution are demonstrated. Although this structure increases the turn-on resistance slightly, it also increases the breakdown voltage (BV) by a larger percentage. Systematic experimental results verify that the breakdown voltage of this device can be tuned by varying the dielectric width.
Keywords :
MOSFET; dielectric materials; electric breakdown; electric resistance; transistors; LDMOSFET; breakdown voltage; dielectric material; dielectric modulated drift region; dielectric width; one-dimensional electric field distribution; transistor; turn-on resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.2720
