Title :
Electrical characteristics of MOSFETs using low-pressure chemical-vapor-deposited oxide
Author :
Lee, Jack ; Hegarty, Chris ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
7/1/1988 12:00:00 AM
Abstract :
The electrical characteristics of MOSFETs and MOS capacitors utilizing thin (80-230 AA) low-pressure chemical-vapor-deposited (LPCVD) oxide films deposited at 12 AA/min are presented. MOSFETs using CVD oxides show good electrical characteristics with 70-90% of the surface mobility of conventional MOSFETs. The CVD oxides exhibit the same low leakage current and high breakdown fields as the thermal oxides, and significantly lower trapping and trap generation rates than thermally grown oxides. Interface state densities of >
Keywords :
CVD coatings; annealing; electron traps; insulated gate field effect transistors; LPCVD; MOS capacitors; MOSFETs; annealing; breakdown fields; dielectrics; electrical characteristics; leakage current; oxide films; surface mobility; trap generation rates; trapping; Annealing; Chemical vapor deposition; Dielectric devices; Electric breakdown; Electric variables; Interface states; Leakage current; MOS capacitors; MOS devices; MOSFETs;
Journal_Title :
Electron Device Letters, IEEE
