DocumentCode
1447679
Title
Nonlinear phenomena in semiconductor photoelectrochemistry
Author
Dusco, C. ; Nagy, Gabor ; Schiller, Robert
Author_Institution
Central Res. Inst. for Phys., Budapest, Hungary
Volume
23
Issue
4
fYear
1988
fDate
8/1/1988 12:00:00 AM
Firstpage
541
Lastpage
544
Abstract
By investigating the photocurrent at the interfaces of different aqueous solutions and of B6As or tungsten bronzes, it is shown that whereas the kinetics is defined by solid-state processes, i.e. light absorption, charge-carrier transport, and recombination, the magnitude of the current depends on the nature and concentration of charge scavengers dissolved in water. The observed square-root dependence of steady-state photocurrent on light intensity is described in terms of second-order recombination in the solid phase. The effect of the liquid-phase composition proves that atomic hydrogen is the active intermediary at the illuminated interface between tungsten bronze and aqueous solution.
Keywords
boron compounds; electron-hole recombination; hydrogen compounds; photoconductivity; semiconductor materials; semiconductor-electrolyte boundaries; B6As; HyNaxWO3; HyWO3; aqueous solutions; charge scavengers; charge-carrier transport; current kinetics; electrolyte interface; illuminated interface; light absorption; light intensity; liquid-phase composition; photocurrent; recombination; semiconductor photoelectrochemistry; tungsten bronzes; Cathodes; Charge carriers; Electrodes; Electrons; Kinetic theory; Liquids; Photoconductivity; Radiative recombination; Solid state circuits; Tungsten;
fLanguage
English
Journal_Title
Electrical Insulation, IEEE Transactions on
Publisher
ieee
ISSN
0018-9367
Type
jour
DOI
10.1109/14.7323
Filename
7323
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