• DocumentCode
    1447679
  • Title

    Nonlinear phenomena in semiconductor photoelectrochemistry

  • Author

    Dusco, C. ; Nagy, Gabor ; Schiller, Robert

  • Author_Institution
    Central Res. Inst. for Phys., Budapest, Hungary
  • Volume
    23
  • Issue
    4
  • fYear
    1988
  • fDate
    8/1/1988 12:00:00 AM
  • Firstpage
    541
  • Lastpage
    544
  • Abstract
    By investigating the photocurrent at the interfaces of different aqueous solutions and of B6As or tungsten bronzes, it is shown that whereas the kinetics is defined by solid-state processes, i.e. light absorption, charge-carrier transport, and recombination, the magnitude of the current depends on the nature and concentration of charge scavengers dissolved in water. The observed square-root dependence of steady-state photocurrent on light intensity is described in terms of second-order recombination in the solid phase. The effect of the liquid-phase composition proves that atomic hydrogen is the active intermediary at the illuminated interface between tungsten bronze and aqueous solution.
  • Keywords
    boron compounds; electron-hole recombination; hydrogen compounds; photoconductivity; semiconductor materials; semiconductor-electrolyte boundaries; B6As; HyNaxWO3; HyWO3; aqueous solutions; charge scavengers; charge-carrier transport; current kinetics; electrolyte interface; illuminated interface; light absorption; light intensity; liquid-phase composition; photocurrent; recombination; semiconductor photoelectrochemistry; tungsten bronzes; Cathodes; Charge carriers; Electrodes; Electrons; Kinetic theory; Liquids; Photoconductivity; Radiative recombination; Solid state circuits; Tungsten;
  • fLanguage
    English
  • Journal_Title
    Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9367
  • Type

    jour

  • DOI
    10.1109/14.7323
  • Filename
    7323