Title :
A 1/4-inch 330 K square pixel progressive scan CMOS active pixel image sensor
Author :
Iida, Yoshinori ; Oba, Eiji ; Mabuchi, Keiji ; Nakamura, Nobuo ; Miura, Hiroki
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
fDate :
12/1/1997 12:00:00 AM
Abstract :
In this paper, three pixel structures have been studied as candidates to realize high density CMOS active pixel sensors. A novel cell structure, the “I-shaped” cell, in which the active regions are formed along a straight line, has been proposed for high-packing density devices. The “I-shaped” cells can realize minimum cell area of 16F2, 14F2, and 14F 2 (F: design rule) for three-transistor-type, two-transistor-type, and one-transistor-type pixels, respectively. A 1/4-inch format progressive scan CMOS active pixel sensor with 640 (H)×480 (V) pixels has been fabricated using a 0.6-μm CMOS process. The sensor operates with 5.0 V single power supply, and power consumption is below 30 mW
Keywords :
CMOS analogue integrated circuits; elemental semiconductors; image sensors; photodiodes; silicon; 0.6 micron; 307200 pixel; 480 pixel; 5.0 V; 640 pixel; CMOS active pixel image sensor; I-shaped cell; Si; cell area; cell structure; high-packing-density devices; one-transistor-type pixels; power consumption; progressive scan; square pixel; three-transistor-type pixels; two-transistor-type pixels; CMOS image sensors; CMOS process; Capacitors; Circuits; Energy consumption; Image sensors; Photodiodes; Pixel; Power supplies; Pulse amplifiers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
