Concurrent Hex-Band GaN Power Amplifier for Wireless Communication Systems

Author

Fagotti, Rossano ; Cidronali, Alessandro ; Manes, Gianfranco

Author_Institution

Dept. of Electron. & Telecommun., Univ. of Florence, Florence, Italy

Volume

21

Issue

2

fYear

2011

Firstpage

89

Lastpage

91

Abstract

In this letter, we propose a novel multi-section transmission line matching technique applied to the design of a concurrent hex-band HEMT GaN power amplifier (PA). The PA has been designed for a concurrent operation at 0.9, 1.8, 2.5, 3.5, 5.2, and 5.8 GHz. Experimental results have shown minimum and maximum saturated output power levels of 33 dBm and 36.7 dBm respectively over the different frequency bands, with the power added efficiency (PAE) ranging from a minimum of 20% to a maximum of 49%. A detailed comparison between simulation and experimental results data has also been reported.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; power amplifiers; radiocommunication; transmission lines; GaN; concurrent hex-band HEMT GaN power amplifier; frequency 0.9 GHz; frequency 1.8 GHz; frequency 2.5 GHz; frequency 3.5 GHz; frequency 5.2 GHz; frequency 5.8 GHz; multi-section transmission line matching; power added efficiency; wireless communication systems; Frequency measurement; Gain measurement; Gallium nitride; Impedance; Impedance matching; Power generation; Prototypes; GaN PA; multi-band PA; multi-band matching;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2010.2098859

Filename

5711406