Title :
High-performance InAlAs/InGaAs HEMTs and MESFETs
Author :
Fathimulla, A. ; Abraham, J. ; Loughran, T. ; Hier, H.
Author_Institution :
Allied-Signal Aerosp. Co., Columbia, MD, USA
fDate :
7/1/1988 12:00:00 AM
Abstract :
The fabrication and microwave performance of heterostructure InAlAs/InGaAs HEMTs (high-electron-mobility transistors) and MESFETs are described. Maximum stable gains of 14.3 dB for a HEMT and 12 dB for a MESFET at 26.5 GHz have been achieved. These are believed to be record gains for FETs having gates as long as 0.7 mu m.<>
Keywords :
Schottky gate field effect transistors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.7 micron; 12 dB; 14.3 dB; 26.5 GHz; HEMTs; MESFETs; heterostructure; high-electron-mobility transistors; microwave performance; stable gains; Degradation; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Leakage current; MESFETs; MODFETs; Voltage;
Journal_Title :
Electron Device Letters, IEEE
