DocumentCode :
1447740
Title :
Effect of angle dependent attempt frequency on Arrhenius-Neel thermal decay in thin film media
Author :
Igarashi, M. ; Akagi, F. ; Yoshida, K. ; Nakatani, Y.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume :
36
Issue :
5
fYear :
2000
fDate :
9/1/2000 12:00:00 AM
Firstpage :
2459
Lastpage :
2461
Abstract :
The angle dependence of the attempt frequency f0 has been determined by assuming isotropic thermal excitation in the anisotropic free energy around the easy axis of a single-domain particle. The relationship between the logarithmic time and the time-dependent remanence coercivity Hcr was estimated. The acquired equation agrees sell with the numerical calculation of the Langevin equation. The conventional formula do not give the correct relationship between Hcr and Kβ(=Kv/kT) because the exponent of Kβ depends on Kβ. The estimated Kβ from Sharrock´s formula is 15% larger at Kβ of 100 and 5% smaller at K β of 50. Bertram´s formula is effective at Kβ of 100 but brings 7% smaller estimation at Kβ of 50
Keywords :
coercive force; free energy; magnetic anisotropy; magnetic particles; magnetic recording; magnetic thin films; remanence; Arrhenius-Neel thermal decay; Bertram formula; Langevin equation; Sharrock formula; angle dependence; anisotropic free energy; attempt frequency; easy axis; magnetic recording; magnetization; single-domain particle; thermal fluctuations; thin film medium; time dependent remanence coercivity; Anisotropic magnetoresistance; Coercive force; Equations; Fluctuations; Frequency; Magnetic anisotropy; Magnetization; Perpendicular magnetic anisotropy; Remanence; Transistors;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.908465
Filename :
908465
Link To Document :
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