DocumentCode
1447740
Title
Effect of angle dependent attempt frequency on Arrhenius-Neel thermal decay in thin film media
Author
Igarashi, M. ; Akagi, F. ; Yoshida, K. ; Nakatani, Y.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume
36
Issue
5
fYear
2000
fDate
9/1/2000 12:00:00 AM
Firstpage
2459
Lastpage
2461
Abstract
The angle dependence of the attempt frequency f0 has been determined by assuming isotropic thermal excitation in the anisotropic free energy around the easy axis of a single-domain particle. The relationship between the logarithmic time and the time-dependent remanence coercivity Hcr was estimated. The acquired equation agrees sell with the numerical calculation of the Langevin equation. The conventional formula do not give the correct relationship between Hcr and Kβ(=Kv/kT) because the exponent of Kβ depends on Kβ. The estimated Kβ from Sharrock´s formula is 15% larger at Kβ of 100 and 5% smaller at K β of 50. Bertram´s formula is effective at Kβ of 100 but brings 7% smaller estimation at Kβ of 50
Keywords
coercive force; free energy; magnetic anisotropy; magnetic particles; magnetic recording; magnetic thin films; remanence; Arrhenius-Neel thermal decay; Bertram formula; Langevin equation; Sharrock formula; angle dependence; anisotropic free energy; attempt frequency; easy axis; magnetic recording; magnetization; single-domain particle; thermal fluctuations; thin film medium; time dependent remanence coercivity; Anisotropic magnetoresistance; Coercive force; Equations; Fluctuations; Frequency; Magnetic anisotropy; Magnetization; Perpendicular magnetic anisotropy; Remanence; Transistors;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.908465
Filename
908465
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