Title :
A high-performance InGaAs/InAlAs double-heterojunction bipolar transistor with nonalloyed n/sup +/-InAs cap layer on InP(n) grown by molecular beam epitaxy
Author :
Peng, C.K. ; Won, T. ; Litton, C.W. ; Morkoc, Hadis
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
fDate :
7/1/1988 12:00:00 AM
Abstract :
An InGaAs/InAlAs double-heterojunction bipolar transistor (DHBT) on InP(n) grown by molecular-beam epitaxy (MBE) that exhibits high DC performance is discussed. An n/sup +/-InAs emitter cap layer was used for nonalloyed contacts in the structure and specific contact resistances of 1.8*10/sup -7/ and 6.0*10/sup -6/ Omega -cm/sup 2/ were measured for the nonalloyed emitter and base contacts, respectively. Since no high-temperature annealing is necessary, excellent contact surface morphology on thinner base devices can easily be obtained. In devices with 50*50- mu m/sup 2/ emitter area, common-emitter current gains as high as 1500 were achieved at a collector current density of 2.7*10/sup 3/ A/cm/sup 2/. The current gain increased up to 2000 for alloyed devices.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; DC performance; InAs; InGaAs-InAlAs; InP; base contacts; collector current density; contact surface morphology; current gain; double-heterojunction bipolar transistor; emitter cap layer; molecular beam epitaxy; nonalloyed contacts; specific contact resistances; Bipolar transistors; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Optical materials; Substrates; Surface morphology;
Journal_Title :
Electron Device Letters, IEEE
