Dynamic switching of tunnel junction MRAM cell with nanosecond field pulses

Author

Sousa, Ricardo C. ; Freitas, Paulo P.

Author_Institution

INESC, Lisbon, Portugal

Volume

36

Issue

5

fYear

2000

fDate

9/1/2000 12:00:00 AM

Firstpage

2770

Lastpage

2772

Abstract

Spin dependent tunnel junctions aimed for the storage element in MRAM cells were switched between low and high resistance states using 20 ns current pulses on two perpendicular conductors. Switching was done in the quasi static mode using an external field and dynamically with field pulses created on chip, For 20 ns pulse widths the introduction of a delay between the two pulses promotes the switching at lower fields and reduces the dispersion in remanent resistance values after switching

Keywords

magnetic switching; magnetisation reversal; magnetoresistive devices; random-access storage; tunnelling; 20 ns; dispersion; dynamic switching; external field; high resistance state; low resistance state; nanosecond field pulses; perpendicular conductors; quasi static mode; remanent resistance; spin dependent tunnel junctions; storage element; switching; tunnel junction MRAM cell; Delay; Electrical resistance measurement; Electrodes; Insulation; Magnetic anisotropy; Magnetic field measurement; Magnetic switching; Magnetic tunneling; Perpendicular magnetic anisotropy; Pulse measurements;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.908585

Filename

908585