Title :
Magnetoresistance oscillations in double ferromagnetic tunnel junctions with layered ferromagnetic nanoparticles
Author :
Nakajima, K. ; Saito, Y. ; Nakamura, S. ; Inomata, K.
Author_Institution :
Corp. Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
fDate :
9/1/2000 12:00:00 AM
Abstract :
Tunnel magnetoresistance in double tunnel junctions with layered ferromagnetic nanoparticles was investigated. The sample comprises two ferromagnetic electrodes (CoFe/Fe) separated by an Al2O3 insulating layer in which layered Co80Pt20 nanoparticles are embedded. The nanoparticles are ellipsoidal with an average diameter of 3.7 nm, and composes a well-defined layer. At 10 K, we observed magnetoresistance oscillation with respect to the bias voltage. The observed TMR oscillation, with a period of 1.6 mV, accompanied oscillations of the conductance. We consider that the conductance oscillation may originate from the single electron charging effect
Keywords :
alumina; cobalt alloys; ferromagnetic materials; iron; iron alloys; magnetic multilayers; magnetoresistance; nanostructured materials; platinum alloys; tunnelling; 1.6 mV; 10 K; 3.7 nm; Al2O3 insulating layer; CoFe-Al2O3-Co80Pt20 -Fe; CoFe/Fe; double ferromagnetic tunnel junctions; layered Co80Pt20 nanoparticles; layered ferromagnetic nanoparticles; magnetoresistance oscillations; single electron charging effect; Electrodes; Electrons; Geometry; Insulation; Iron; Magnetic field measurement; Nanoparticles; Sputtering; Tunneling magnetoresistance; Voltage;
Journal_Title :
Magnetics, IEEE Transactions on