Magnetoresistance oscillations in double ferromagnetic tunnel junctions with layered ferromagnetic nanoparticles

Author

Nakajima, K. ; Saito, Y. ; Nakamura, S. ; Inomata, K.

Author_Institution

Corp. Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

Volume

36

Issue

5

fYear

2000

fDate

9/1/2000 12:00:00 AM

Firstpage

2806

Lastpage

2808

Abstract

Tunnel magnetoresistance in double tunnel junctions with layered ferromagnetic nanoparticles was investigated. The sample comprises two ferromagnetic electrodes (CoFe/Fe) separated by an Al₂O₃ insulating layer in which layered Co₈₀Pt₂₀ nanoparticles are embedded. The nanoparticles are ellipsoidal with an average diameter of 3.7 nm, and composes a well-defined layer. At 10 K, we observed magnetoresistance oscillation with respect to the bias voltage. The observed TMR oscillation, with a period of 1.6 mV, accompanied oscillations of the conductance. We consider that the conductance oscillation may originate from the single electron charging effect

Keywords

alumina; cobalt alloys; ferromagnetic materials; iron; iron alloys; magnetic multilayers; magnetoresistance; nanostructured materials; platinum alloys; tunnelling; 1.6 mV; 10 K; 3.7 nm; Al₂O₃ insulating layer; CoFe-Al₂O₃-Co₈₀Pt₂₀-Fe; CoFe/Fe; double ferromagnetic tunnel junctions; layered Co₈₀Pt₂₀ nanoparticles; layered ferromagnetic nanoparticles; magnetoresistance oscillations; single electron charging effect; Electrodes; Electrons; Geometry; Insulation; Iron; Magnetic field measurement; Nanoparticles; Sputtering; Tunneling magnetoresistance; Voltage;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.908595

Filename

908595