Title :
Electrostatic discharge testing of tunneling magnetoresistive (TMR) devices
Author :
Wallash, Albert ; Hillman, Jim ; Sharma, Manish ; Wang, Shan X.
Author_Institution :
Quantum Corp., Milpitas, CA, USA
fDate :
9/1/2000 12:00:00 AM
Abstract :
We report on an experimental and SPICE simulation study of electrostatic discharge (ESD) damage of tunneling magnetoresistive (TMR) junctions. The human body model (HBM) ESD failure voltage was found to be 6 VHBM, higher than the 2 V DC breakdown voltage. This difference is explained in terms of the dependence of the HBM failure voltage on the resistance and capacitance of the TMR device. A simple SPICE model for a TMR device is used to study the response of a TMR device during an ESD event
Keywords :
SPICE; electrostatic discharge; failure analysis; magnetic recording; magnetoresistive devices; tunnelling; 6 V; ESD failure voltage; HBM failure voltage; SPICE simulation; capacitance; electrostatic discharge testing; human body model; resistance; tunneling magnetoresistive devices; Biological system modeling; Circuit simulation; Circuit testing; Electrostatic discharge; Giant magnetoresistance; Humans; Immune system; Magnetic field measurement; Tunneling magnetoresistance; Voltage;
Journal_Title :
Magnetics, IEEE Transactions on
