DocumentCode
1448700
Title
Theory of domain wall resistance in nanocontacts
Author
Tatara, Gen ; García, N.
Author_Institution
Graduate Sch. of Sci., Osaka Univ., Japan
Volume
36
Issue
5
fYear
2000
fDate
9/1/2000 12:00:00 AM
Firstpage
2839
Lastpage
2840
Abstract
The magnetoresistance due to domain wall in nanocontacts is studied theoretically. In the case of ballistic contacts, strong reflection of the electron is caused by domain wall, which is constrained in the contact region, leading to a large magnetoresistance. In the dirty case, the scattering by the wall is smeared out by the impurities, and thus the magnetoresistance is not so large
Keywords
exchange interactions (electron); giant magnetoresistance; high field effects; interface magnetism; magnetic domain walls; nanotechnology; spin Hamiltonians; Hamiltonian; ballistic contacts; dirty case; domain wall resistance; exchange splitting; large magnetoresistance; magnetoconductance; nanocontacts; strong electron reflection; wall scattering; Ballistic magnetoresistance; Conductivity; Electrons; Giant magnetoresistance; Impurities; Magnetic anisotropy; Magnetic domain walls; Magnetic domains; Nanocontacts; Scattering;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.908603
Filename
908603
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