DocumentCode :
1448700
Title :
Theory of domain wall resistance in nanocontacts
Author :
Tatara, Gen ; García, N.
Author_Institution :
Graduate Sch. of Sci., Osaka Univ., Japan
Volume :
36
Issue :
5
fYear :
2000
fDate :
9/1/2000 12:00:00 AM
Firstpage :
2839
Lastpage :
2840
Abstract :
The magnetoresistance due to domain wall in nanocontacts is studied theoretically. In the case of ballistic contacts, strong reflection of the electron is caused by domain wall, which is constrained in the contact region, leading to a large magnetoresistance. In the dirty case, the scattering by the wall is smeared out by the impurities, and thus the magnetoresistance is not so large
Keywords :
exchange interactions (electron); giant magnetoresistance; high field effects; interface magnetism; magnetic domain walls; nanotechnology; spin Hamiltonians; Hamiltonian; ballistic contacts; dirty case; domain wall resistance; exchange splitting; large magnetoresistance; magnetoconductance; nanocontacts; strong electron reflection; wall scattering; Ballistic magnetoresistance; Conductivity; Electrons; Giant magnetoresistance; Impurities; Magnetic anisotropy; Magnetic domain walls; Magnetic domains; Nanocontacts; Scattering;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.908603
Filename :
908603
Link To Document :
بازگشت