DocumentCode
1448791
Title
Modeling and experiment of transport properties of spin-valves with synthetic antiferromagnet
Author
Chen, Jian ; Mao, Sining ; Fernandez-de-Castro, Juan ; Choy, Tat-Sang ; Hershfield, Selman
Author_Institution
Seagate Technol., Minneapolis, MN, USA
Volume
36
Issue
5
fYear
2000
fDate
9/1/2000 12:00:00 AM
Firstpage
2885
Lastpage
2887
Abstract
Both band structure calculations and experiments show that the giant-magnetoresistance (GMR) of a spin-valve with a synthetic-antiferromagnetic pinned layer is smaller than that with a single pinned layer. This smaller GMR is shown to come from the s-d scattering in the Ru layer and part of the pinned layer that has the opposite moment direction. Half of the synthetic-antiferromagnet does not contribute to the GMR and only shunts the current
Keywords
antiferromagnetic materials; band structure; giant magnetoresistance; interface states; spin valves; band structure calculations; giant-magnetoresistance; s-d scattering; spin-valves; synthetic antiferromagnet; synthetic-antiferromagnetic pinned layer; transport properties; Antiferromagnetic materials; Cooling; Demagnetization; Gas detectors; Helium; Magnetic sensors; Magnetic separation; Scattering; Temperature; Transistors;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.908617
Filename
908617
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