Title :
Epitaxial growth and magnetic properties of Ni80Fe20/Fe60Mn40 bilayers on H-Si(110) using a Cu buffer layer
Author :
Liu, Congxiao ; Yu, Chengtao ; Jiang, Huaming ; Mankey, G.J.
Author_Institution :
Center for Mater. for Inf. Technol., Alabama Univ., Tuscaloosa, AL, USA
fDate :
9/1/2000 12:00:00 AM
Abstract :
A very thin Cu (~1 nm) buffer layer on Si(110) is enough to induce Ni80Fe20/Fe60Mn40 (111) epitaxial growth. The film surface roughness increases with increasing Cu thickness. The crystallinity improves as the Cu buffer thickness increases. The uniaxial anisotropy of the pinned Ni80Fe20 was greatly enhanced in the samples with thick Cu (>10 nm). This reflects the great effect of film crystallinity on exchange anisotropy
Keywords :
antiferromagnetic materials; exchange interactions (electron); ferromagnetic materials; iron alloys; magnetic anisotropy; magnetic epitaxial layers; manganese alloys; nickel alloys; sputter deposition; surface topography; vapour phase epitaxial growth; Cu buffer layer; Ni80Fe20-Fe60Mn40-Cu; Si; bilayers; crystallinity; epitaxial growth; exchange anisotropy; surface roughness; uniaxial anisotropy; Anisotropic magnetoresistance; Buffer layers; Crystallization; Epitaxial growth; Iron; Magnetic films; Magnetic properties; Optical films; Rough surfaces; Surface roughness;
Journal_Title :
Magnetics, IEEE Transactions on
