Title :
Self-Assembled Periodic Silica Nanosphere Arrays on Wet-Etched Patterned Sapphire Substrate for a High-Light-Extraction-Efficiency Light-Emitting Diode
Author :
Han, Nam ; Kim, Hyung-Gu ; Kim, Hee-Yun ; Kang, Ji-Hye ; Ryu, Beo-Deul ; Park, Young-Jae ; Han, Min ; Jeong, Hyun ; Chandramohan, S. ; Suh, Eun-Kyung ; Hong, Chang-Hee
Author_Institution :
Semicond. Phys. Res. Center, Chonbuk Nat. Univ., Jeonju, South Korea
fDate :
4/1/2011 12:00:00 AM
Abstract :
We have developed a periodical self-assembled method of patterning the sapphire substrate with silica nanospheres for light-emitting diode (LED) applications. Using this method, silica nanospheres were directed to self-assemble in a periodic fashion on a wet-etched patterned sapphire substrate (WPSS). Moreover, we fabricated an InGaN/GaN-based LED on the silica-nanosphere-assembled WPSS. The light output power of the resultant LED was about 2.23 and 1.7 times higher than that of the LEDs grown on planar sapphire and WPSS, respectively. Moreover, the light extraction efficiency of the silica-nanosphere-assembled WPSS LED was 37% higher than that of conventional LED.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; light emitting diodes; nanoelectronics; nanofabrication; sapphire; self-assembly; semiconductor growth; silicon compounds; wide band gap semiconductors; Al2O3; InGaN-GaN; LED; SiO2; high-light-extraction-efficiency light-emitting diode; periodical self-assembled method; self-assembled periodic silica nanosphere arrays; silica-nanosphere-assembled WPSS; wet-etched patterned sapphire substrate; Gallium nitride; Light emitting diodes; Power generation; Self-assembly; Silicon compounds; Substrates; Temperature measurement; InGaN/GaN light-emitting diode (LED); light extraction; patterned sapphire; silica nanosphere;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2103922
