Semitransparent Field-Effect Transistors Based on ZnO Nanowire Networks

This investigation demonstrates the fabrication of semitransparent field-effect transistors with self-assembling ordered ZnO nanowire (NW) networks, using a high-k HfO₂ gate. The devices exhibit excellent optical transparency and transistor performance at on/off ratios of >;10⁵, a mobility of ~7.59 cm² V^-1 s^-1, and threshold voltages of 4 V. Under UV illumination (3.65 eV), the devices exhibit the highest relative photoconductivity (2.08 10^5), corresponding to a photoresponsivity of 3.96 A/W at low operating voltages ( V_GS = 0 V and V_DS = 1 V). The result suggests that the NW-based devices have low power consumption and high photosensivity when used in photodetection.