Title :
A
-Band InAs/InP Quantum Dot Semiconductor Mode-Locked Laser Emitting 403-GHz Repetition Rate Pulses
Author :
Jiao, Zhejing ; Liu, Jiaren ; Lu, Zhenguo ; Zhang, Xiupu ; Poole, Philip J. ; Barrios, Pedro J. ; Poitras, Daniel
Author_Institution :
Inst. for Microstrcutural Sci., Nat. Res. Council Canada, Ottawa, ON, Canada
fDate :
5/1/2011 12:00:00 AM
Abstract :
A passive InAs/InP quantum dot (QD) semiconductor mode-locked laser (MLL) emitting 403-GHz repetition rate pulses with 268- and 563-fs pulse durations is demonstrated experimentally around 1.54 μm. The QD MLL consists of a QD Fabry-Pérot laser and external cavities that include eight fiber Bragg gratings (FBGs). The mode-locking is realized by four-wave mixing in the QD waveguide between the longitudinal modes selected by the FBGs.
Keywords :
Bragg gratings; III-V semiconductors; indium compounds; laser cavity resonators; laser mode locking; laser modes; multiwave mixing; optical fibres; optical pulse generation; quantum dot lasers; FBG; InAs-InP; QD Fabry-Perot laser; QD MLL; QD waveguide; external cavities; fiber Bragg gratings; four-wave mixing; frequency 403 GHz; longitudinal modes; quantum dot semiconductor mode-locked laser; repetition rate pulses; time 268 fs; time 563 fs; Laser modes; Optical fibers; Optical reflection; Quantum dot lasers; Waveguide lasers; Fiber Bragg gratings (FBGs); four-wave mixing (FWM); high repetition rate pulse generation; quantum dot mode-locked lasers (QD MLLs);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2011.2114340