DocumentCode :
1448926
Title :
An Activity-Triggered 95.3 dB DR - 75.6 dB THD CMOS Imaging Sensor With Digital Calibration
Author :
Yuan, Jie ; Chan, Ho Yeung ; Fung, Sheung Wai ; Liu, Bing
Author_Institution :
Electron. & Comput. Eng. Dept., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Volume :
44
Issue :
10
fYear :
2009
Firstpage :
2834
Lastpage :
2843
Abstract :
Imaging sensors are being used as data acquisition systems in new biomedical applications. These applications require wide dynamic range (WDR), high linearity and high signal-to-noise ratio (SNR), which cannot be met simultaneously by existing CMOS imaging sensors. This paper introduces a new activity-triggered WDR CMOS imaging sensor with very low distortion. The new WDR pixel includes self-resetting circuits to partially quantize the photocurrent in the pixel. The pixel residual analog voltage is further quantized by a low-resolution column-wise ADC. The ADC code and the partially quantized pixel codes are processed by column-wise digital circuits to form WDR images. Calibration circuits are included in the pixel to improve the pixel linearity by a digital calibration method, which requires low calibration overhead. Current-mode difference circuits are included in the pixel to detect activities within the scene so that the imaging sensor captures high quality images only for scenes with intense activity. A proof-of-concept 32 times 32 imaging sensor is fabricated in a 0.35 mum CMOS process. The fill factor of the new pixel is 27%. Silicon measurements show that the new imaging sensor can achieve 95.3 dB dynamic range with low distortion of -75.6 dB after calibration. The maximum SNR of the sensor is 74.5 dB. The imaging sensor runs at frame rate up to 15 Hz.
Keywords :
CMOS image sensors; analogue-digital conversion; biomedical communication; data acquisition; ADC code; THD CMOS imaging sensor; biomedical applications; column-wise digital circuits; current-mode difference circuits; data acquisition systems; digital calibration; pixel residual analog voltage; self-resetting circuits; signal-to-noise ratio; size 0.35 mum; wide dynamic range; Biomedical imaging; Biosensors; CMOS image sensors; Calibration; Circuits; Dynamic range; Image sensors; Layout; Linearity; Pixel; Activity-triggered detection; CMOS imaging sensor; difference image; digital calibration; high linearity; wide dynamic range;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2009.2027929
Filename :
5256974
Link To Document :
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