Title :
Temperature dependence of the threshold current for InGaAlP visible laser diodes
Author :
Ishikawa, Masayuki ; Shiozawa, Hideo ; Itaya, Kazuhiko ; Hatakoshi, Gen-ichi ; Uematsu, Yutaka
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fDate :
1/1/1991 12:00:00 AM
Abstract :
The temperature dependence of the threshold current for InGaAlP visible-light laser diodes was investigated from the standpoint of gain-current characteristics. The dependence of the light output power versus the current characteristic on the cavity length was evaluated for a 40-μm-wide InGaP-InGaAlP broad-stripe laser in the temperature range between -70 and 90°C. The threshold-current density dependence on the cavity length shows that a linear-gain approximation is suitable for this system. A minimum threshold-current density of 860 A/cm2 was achieved at room temperature with a cavity length of 1160 μm. The internal quantum efficiency decreased in the temperature range higher than -10°C, which affected the excess threshold-current increase and the decrease in the characteristic temperature at this temperature range
Keywords :
gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; semiconductor junction lasers; -70 to 90 degC; 1160 micron; 40 micron; InGaAlP visible laser diodes; InGaP-InGaAlP; broad-stripe laser; cavity length; gain-current characteristics; internal quantum efficiency; light output power; linear-gain approximation; room temperature; temperature dependence; threshold-current density; Diode lasers; Laser theory; Optical losses; Optical materials; Photonic band gap; Power generation; Power lasers; Temperature dependence; Temperature distribution; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
