Title :
The annealing of double-heterostructure GaInAsP-InP 1.3 μm
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
fDate :
1/1/1991 12:00:00 AM
Abstract :
An attempt to understand the various aging patterns discovered from lifetests on GaInAsP-InP laser diodes is reported. These lasers are characterized by initial changes that, after a short period, settle down. The lasers then operate stably with very little change thereafter. In the diodes used, drive current increases of typically 6% occurred. There was little change in threshold current and the changes seen were mainly due to a decrease in slope efficiency. In all cases, the changes decreased gradually after about 2000 h and reverted to the behavior expected of long-lived and reliable quaternary lasers. A model for the annealing of double-heterostructure laser diodes is extended to describe these effects
Keywords :
III-V semiconductors; annealing; gallium arsenide; gallium compounds; indium compounds; life testing; optical workshop techniques; semiconductor device testing; semiconductor junction lasers; semiconductor technology; 1.3 micron; 2000 hrs; GaInAsP-InP; aging patterns; annealing; diode laser models; double-heterostructure; drive current; lifetests; quaternary lasers; slope efficiency; threshold current; Aging; Annealing; Diode lasers; Indium phosphide; Laser transitions; Optical attenuators; Optical control; Optical device fabrication; Optical fiber communication; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
