A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology

Author

Campbell, Charles ; Lee, Cathy ; Williams, Victoria ; Kao, Ming-Yih ; Tserng, Hua-Quen ; Saunier, Paul ; Balisteri, Tony

Author_Institution

TriQuint Semicond., Richardson, TX, USA

Volume

44

Issue

10

fYear

2009

Firstpage

2640

Lastpage

2647

Abstract

The design and performance of a wideband power amplifier MMIC suitable for electronic warfare (EW) systems and other wide bandwidth applications is presented. The amplifier utilizes dual field plate 0.25- mum GaN on SiC device technology integrated into the three metal interconnect (3 MI) process flow. Experimental results for the MMIC at 30 V power supply operation demonstrate greater than 10 dB of small signal gain, 9 W to 15 W saturated output power and 20% to 38% peak power-added efficiency over a 1.5 GHz to 17 GHz bandwidth.

Keywords

III-V semiconductors; MMIC power amplifiers; electronic warfare; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; wideband amplifiers; GaN; HEMT technology; SiC; bandwidth 1.5 GHz to 17 GHz; dual field plate; electronic warfare system; power 9 W to 15 W; three metal interconnect process flow; voltage 30 V; wide bandwidth application; wideband power amplifier MMIC; Bandwidth; Broadband amplifiers; Electronic warfare; Gallium nitride; HEMTs; MMICs; Power amplifiers; Power supplies; Power system interconnection; Silicon carbide; Distributed amplifier; MMIC; gallium nitride (GaN); power amplifier;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2009.2026824

Filename

5256995