Title :
The refractive index near the fundamental absorption edge in AlxGa1-xAs ternary compound semiconductors
Author :
Jensen, B. ; Jensen, William D.
Author_Institution :
Dept. of Phys., Lowell Univ., MA, USA
fDate :
1/1/1991 12:00:00 AM
Abstract :
The real part of the complex refractive index is calculated for photon energies over the region from 1.2 to 1.8 eV for AlxGa 1-xAs compounds as a function of x. No singularity is predicted. Rather, a change in the functional form of the refractive index, n occurs as the photon energy passes through the bandgap energy, G, leading to a local maximum or, more accurately, a plateau region in n as a function of frequency, which is observed experimentally. The effect of a finite-spin orbit-splitting energy and the effect of higher conduction bands are included. Theoretical and experimental results are compared for AlxGa 1-xAs over a range of mole fractions from x=0 to x=0.198
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; energy gap; gallium arsenide; refractive index; 1.8 to 1.2 eV; AlxGa1-xAs ternary compound semiconductors; bandgap energy; complex refractive index; conduction bands; finite-spin orbit-splitting energy; fundamental absorption edge; mole fractions; photon energies; refractive index; Absorption; Conducting materials; Dielectric constant; Effective mass; Electrons; Frequency; Helium; Orbital calculations; Photonic band gap; Refractive index;
Journal_Title :
Quantum Electronics, IEEE Journal of
