Title :
Operation of a Novel Device With Suspended Nanowire Channels
Author :
Lin, Horng-Chih ; Kuo, Chia-Hao ; Li, Guan-Jang ; Su, Chun-Jung ; Huang, Tiao-Yuan
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
5/1/2010 12:00:00 AM
Abstract :
We investigate the operation of a new device featuring a side-gate scheme and suspended poly-Si nanowire (NW) channels. The fabrication adopted a sidewall-spacer-etching technique to form the poly-Si NW channels. The NW channels were further suspended using a simple wet-etching step. An interesting hysteresis phenomenon is observed in the I-V characteristics. In addition, a steep subthreshold swing (< 60 mV/dec) is also observed in the transfer curves. A scenario is proposed to explain the operation of such a device.
Keywords :
MOSFET; elemental semiconductors; etching; nanowires; silicon; MOSFET; Si; side-gate scheme; sidewall-spacer-etching; suspended nanowire channels; wet-etching; Hysteresis; MOSFET; nanowire (NW); poly-Si;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2041744
