Snapback and Postsnapback Saturation of Pseudomorphic High-Electron Mobility Transistor Subject to Transient Overstress

Author

Cui, Qiang ; Parthasarathy, Srivatsan ; Salcedo, Javier A. ; Liou, Juin J. ; Hajjar, Jean J. ; Zhou, Yuanzhong

Author_Institution

Sch. of EECS, Univ. of Central Florida, Orlando, FL, USA

Volume

31

Issue

5

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

425

Lastpage

427

Abstract

The snapback and postsnapback saturation characteristics in a pseudomorphic high-electron mobility transistor (PHEMT) subject to electrostatic discharge (ESD) transient overstress are studied. This is undertaken, for the first time, via transmission line pulsing (TLP)-like 2-D device simulations and benchmarked against TLP measurements. Physical mechanisms underlying the postsnapback behavior and ESD-induced failure are identified and discussed by analyzing TLP-like simulation results rather than extrapolating dc-like numerical simulation data.

Keywords

electrostatic discharge; high electron mobility transistors; transmission lines; electrostatic discharge transient; postsnapback saturation; pseudomorphic high-electron mobility transistor; snapback saturation; transient overstress; transmission line pulsing-like 2D device simulation; Electrostatic discharge (ESD); high-electron mobility transistor; saturation; snapback;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2042029

Filename

5437293