Magnetoresistance of a single domain wall in Co and Ni nanowires

Author

Radulescu, A. ; Ebels, U. ; Henry, Y. ; Ounadjela, K. ; Duvail, J.L. ; Piraux, L.

Author_Institution

Unite de Physico-Chimie et Phys. des Mater., Univ. Catholique de Louvain, Belgium

Volume

36

Issue

5

fYear

2000

fDate

9/1/2000 12:00:00 AM

Firstpage

3062

Lastpage

3064

Abstract

We report on the domain wall magnetoresistance of Co and Ni nanowires of 35 nm on diameter or less. The enhancement of the resistance due to an isolated domain wall is clearly evidenced from magnetoresistance hysteresis loops obtained under parallel and perpendicular fields. The domain walls magnetoresistance effect is by one order of magnitude smaller in Ni than in Co and it was observed only at low temperature for Ni nanowires. The formation and motion of domain walls is demonstrated by MFM experiments

Keywords

cobalt; ferromagnetic materials; hysteresis; magnetic domain walls; magnetoresistance; nanostructured materials; nickel; Co; Co nanowires; MFM experiments; Ni; Ni nanowires; hysteresis loops; low temperature; magnetic nanowire; magnetic structure imaging; magnetoresistance; single domain wall; spin relaxation; Anisotropic magnetoresistance; Biomembranes; Geometry; Gold; Magnetic anisotropy; Magnetic domain walls; Magnetic domains; Nanowires; Perpendicular magnetic anisotropy; Strips;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.908680

Filename

908680