Title :
Low-frequency dispersion of transconductance in GaAs JFETs and MESFETs with an ion-implanted channel layer
Author :
Kawasaki, Hidetoshi ; Kasahara, Jiro
Author_Institution :
Sony Corp. Res. Center, Yokohama, Japan
fDate :
8/1/1990 12:00:00 AM
Abstract :
An analytical model of low-frequency dispersion of transconductanced in GaAs FETs which have nonuniform profiles of carrier concentration and mobility is reported. The frequency dependence of surface charge density is incorporated into the model as a variation in the source resistance of the FETs. The model explains the low-frequency dispersion of transconductance in GaAs p-n junction FETs (JFETs) and metal-semiconductor FETs (MESFETs), both of which have a channel layer formed by ion implantation. It is suggested that the low-frequency dispersion of transconductance can be attributed to the charge exchange which occurs with the surface states in GaAs FETs
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; junction gate field effect transistors; semiconductor device models; GaAs; JFETs; MESFETs; analytical model; charge exchange; frequency dependence; ion implantation; ion-implanted channel layer; low-frequency dispersion of transconductanced; nonuniform profiles of carrier concentration; semiconductors; source resistance; surface charge density; Analytical models; FETs; Frequency dependence; Gallium arsenide; Ion implantation; JFETs; MESFETs; P-n junctions; Surface resistance; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
