Design of a process variation tolerant CMOS opamp in 6H-SiC technology for high-temperature operation

Author

Chen, Jian-Song ; Kornegay, Kevin T.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

45

Issue

11

fYear

1998

fDate

11/1/1998 12:00:00 AM

Firstpage

1159

Lastpage

1171

Abstract

A process variation tolerant silicon carbide CMOS operational amplifier intended for high-temperature operation with a tunable phase margin and unity-gain bandwidth is presented. A novel bias circuit is provided such that the voltage gain of the operational amplifier is insensitive to large threshold voltage and mobility variations. An output stage along with an adaptive biasing technique is developed to produce a full rail-to-rail output voltage swing and a low output resistance. To achieve a large phase margin in the presence of large process variations, a compensation structure using a tunable external voltage is also proposed

Keywords

CMOS analogue integrated circuits; circuit tuning; compensation; high-temperature electronics; integrated circuit design; operational amplifiers; semiconductor materials; silicon compounds; CMOS opamp; SiC; adaptive biasing technique; bias circuit; compensation structure; high-temperature operation; mobility variations; output resistance; process variation tolerant circuit; process variations; rail-to-rail output voltage swing; threshold voltage; tunable external voltage; tunable phase margin; unity-gain bandwidth; voltage gain; CMOS process; CMOS technology; Capacitors; Integrated circuit technology; Process design; Silicon carbide; Temperature distribution; Temperature sensors; Threshold voltage; Tunable circuits and devices;

fLanguage

English

Journal_Title

Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on

Publisher

ieee

ISSN

1057-7122

Type

jour

DOI

10.1109/81.735438

Filename

735438