DocumentCode
1449597
Title
Vertically Coupled Quantum-Dot Infrared Photodetectors
Author
Lo, Ming-Cheng ; Wang, Shiang-Yu ; Ling, Hong-Shi ; Lee, Chien-Ping
Author_Institution
Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
22
Issue
11
fYear
2010
fDate
6/1/2010 12:00:00 AM
Firstpage
796
Lastpage
798
Abstract
Vertically coupled InAs-GaAs quantum-dot infrared photodetectors (QDIPs) were studied in this letter. With vertically coupled quantum dots (QDs), the QDs in the same column share the same electronic states which remove the QD size variation effect in the growth direction and result in a narrow response band and higher peak quantum efficiency. The coupled states increase the capture probability and also facilitate the carrier flow among QD layers. The frequency response of vertically coupled QDIPs is much faster than that of the conventional ones.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; InAs-GaAs; capture probability; carrier flow; coupled states; electronic states; frequency response; growth direction; narrow response band; vertically coupled quantum-dot infrared photodetectors; Infrared detectors; photodetectors; quantum dots (QDs); quantum effect semiconductor devices;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2010.2046030
Filename
5437347
Link To Document