DocumentCode :
1449612
Title :
Telegraph noise mechanism and LLG noise model
Author :
Chen, Lujun ; De-Castro, Juan Fernandez ; Giusti, Jim ; Fang, Hao ; Hurben, Michael
Author_Institution :
Seagate Technol. Inc., Bloomington, MN, USA
Volume :
36
Issue :
5
fYear :
2000
fDate :
9/1/2000 12:00:00 AM
Firstpage :
3195
Lastpage :
3198
Abstract :
A preliminary study on random telegraph noise (RTN) is made. RTN is defined as the magnetization states switching by thermal fluctuations. State jumping resulting in baseline shift from the media field could also be RTN-associated multi-states switching. Our analysis shows that the root cause of such magnetization multi-states could be due to: (1) free layer edge states switching caused by a weak PM field; (2) surface and/or interface roughness, especially the lapped air bearing surface (ABS); and (3) random defects in the stack layers. A thermal noise model with Landau-Lifshitz-Gilbert equation (LLG) was developed and was applied to RTN demonstration
Keywords :
magnetic recording noise; magnetic switching; magnetisation; thermal noise; LLG model; Landau-Lifshitz-Gilbert equation; PM field; air bearing surface; free layer edge states; interface roughness; magnetic recording; magnetization; multi-states switching; random defects; random telegraph noise; stack layer; surface roughness; thermal fluctuations; thermal noise; Bifurcation; Fluctuations; Magnetic field measurement; Magnetic levitation; Magnetic noise; Magnetic switching; Magnetization; Rough surfaces; Telegraphy; Voltage;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.908735
Filename :
908735
Link To Document :
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