Comparison of two-wave and three-wave forward mixing in bismuth silicon oxide-theory and experiment

Author

Jones, D.C. ; Solymar, L.

Author_Institution

Dept. of Eng. Sci., Oxford Univ., UK

Volume

27

Issue

1

fYear

1991

fDate

1/1/1991 12:00:00 AM

Firstpage

121

Lastpage

127

Abstract

A comparison is made between the traditional two-wave amplification mechanism and a new mechanism that is due to forward three-wave mixing. It is found experimentally that considerably higher amplification is available using forward three-wave mixing. Experimental results are in good qualitative agreement with theory concerning dependence on frequency detuning and interbeam angle, but there is a discrepancy between experiment and theory relating to the magnitude of the gain obtainable by two-wave and three-wave mixing, respectively. It is suggested that an additional physical gain mechanism arising from large modulation effects should be included in the theory to account fully for the discrepancy between two-wave and three-wave results

Keywords

bismuth compounds; multiwave mixing; optical materials; Bi₁₂SiO₂₀; frequency detuning; interbeam angle; large modulation effects; three-wave forward mixing; two-wave amplification mechanism; two-wave forward mixing; Bismuth; Frequency; Gratings; Helium; Interference; Laser excitation; Liquid crystals; Nonlinear optics; Optical coupling; Silicon;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.73549

Filename

73549