DocumentCode :
1449687
Title :
Memristance View of Piezoelectricity
Author :
Ukil, Abhisek
Author_Institution :
ABB Corp. Res., Baden-Daettwil, Switzerland
Volume :
11
Issue :
10
fYear :
2011
Firstpage :
2514
Lastpage :
2517
Abstract :
In recent times, there have been significant focus on the memristor which is classified as the fourth basic circuit element. In 2008, teams from HP-labs showed possible fabrication of nonlinear memory-dependent variable resistors using titanium dioxide (TiO2)-based materials. Memristance can be viewed as the generalized resistance which depends on the internal state of the device. In other words, memristance is charge dependent. In this context, it is interesting to pay attention to the reversible piezoelectric effect. Certain piezoelectric crystals and ceramics develop voltage when put under external mechanical stress (direct effect), or deform in shape under voltage (converse effect). In this paper, we propose to view the piezoelectric effect in terms of the memristance theory.
Keywords :
deformation; micromechanical devices; piezoceramics; piezoelectricity; resistors; titanium compounds; ceramics; deformation; external mechanical stress; memristance view; nonlinear memory-dependent variable resistors; piezoelectric crystals; piezoelectricity; reversible piezoelectric effect; titanium dioxide-based materials; Materials; Metals; Piezoelectric effect; Resistance; Strain; Stress; Chalcogenide alloys; circuit element; direct piezoelectricity; linear piezoelectric theory; memory-dependent resistor; memristor; metal oxide; phase change memory; reverse piezoelectricity; varistor;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2011.2114878
Filename :
5713221
Link To Document :
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