DocumentCode :
1449702
Title :
Redox Reaction Switching Mechanism in RRAM Device With 
Structure
Author :
Syu, Yong-En ; Chang, Ting-Chang ; Tsai, Tsung-Ming ; Hung, Ya-Chi ; Chang, Kuan-Chang ; Tsai, Ming-Jinn ; Kao, Ming-Jer ; Sze, Simon M.
Author_Institution :
Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Volume :
32
Issue :
4
fYear :
2011
fDate :
4/1/2011 12:00:00 AM
Firstpage :
545
Lastpage :
547
Abstract :
This letter investigates the resistive random access memory device characteristics and the physical mechanism of a device with a TiN/CoSiOX/Pt structure. In general, the mechanism is regarded as a redox reaction in the dielectric interface between the Ti electrode and the conductive filament. Furthermore, the switching voltage is correlated only with redox reaction potential. A designed circuit is used to accurately observe the resistance switching process with a pulse generator and an oscilloscope, which reveals that the switching process is related to both time and voltage. The constant switching energy demonstrates that the switching mechanism is the redox reaction.
Keywords :
cobalt compounds; oscilloscopes; platinum; pulse generators; random-access storage; silicon compounds; titanium compounds; Pt-CoSiOX-TiN; RRAM device; conductive filament; constant switching energy; dielectric interface; oscilloscope; physical mechanism; pulse generator; redox reaction switching mechanism; resistance switching process; resistive random access memory device characteristics; Nonvolatile memory; Oscilloscopes; Resistance; Silicon; Switches; Tin; Voltage measurement; Cobalt silicon oxide $(hbox{CoSiO}_{X})$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2104936
Filename :
5713223
Link To Document :
