A Study of Parasitic Series Resistance Components in In–Ga–Zn–Oxide (a-IGZO) Thin-Film Transistors

Author

Kondratyuk, Roman I. ; Im, Kiju ; Stryakhilev, Denis ; Choi, Chaun Gi ; Kim, Mu-Gyeom ; Yang, Huiwon ; Park, HyeHyang ; Mo, Yeon Gon ; Kim, Hye Dong ; Kim, Sang Soo

Author_Institution

OLED Res. Inst., Samsung Mobile Display Co., Ltd., Yongin, South Korea

Volume

32

Issue

4

fYear

2011

fDate

4/1/2011 12:00:00 AM

Firstpage

503

Lastpage

505

Abstract

We extracted the effective channel length and parasitic series resistance in a-IGZO inverted-staggered etch-stop (ES) TFTs. When there is an overlap between the drain or source electrode and the FET channel, the resistance of the channel underneath the overlapping regions is very low compared with other channel region resistance. As a result, the effective channel length is smaller than the physical length. The aforementioned definition of effective channel length in terms of device geometric parameters seems to be specific for ES a-IGZO TFTs.

Keywords

amorphous semiconductors; field effect transistors; gallium compounds; indium compounds; thin film transistors; FET channel; InGaZnO; device geometric parameters; drain electrode; effective channel length; inverted-staggered etch-stop thin-film transistors; parasitic series resistance components; source electrode; Amorphous silicon; Logic gates; MOSFET circuits; Resistance; Thin film transistors; Effective channel length; IGZO; TFT; parasitic series resistance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2104937

Filename

5713224