Title :
Reduction of Photo-Leakage Current in ZnO Thin-Film Transistors With Dual-Gate Structure
Author :
Kamada, Yudai ; Fujita, Shizuo ; Kimura, Mutsumi ; Hiramatsu, Takahiro ; Matsuda, Tokiyoshi ; Furuta, Mamoru ; Hirao, Takashi
Author_Institution :
Grad. Sch. of Eng., Kyoto Univ., Kyoto, Japan
fDate :
4/1/2011 12:00:00 AM
Abstract :
Origin of photo-leakage current in ZnO thin film transistors (TFTs) has been attributed to tunneling current through the Schottky contact properties of source due to Schottky barrier narrowing by light-induced holes. Therefore, it is important to maintain sufficient potential barrier width under light-irradiation in order to suppress the photo-leakage current. It is shown that dual-gate ZnO TFTs are effective to reduce the photo-leakage current.
Keywords :
Schottky barriers; leakage currents; thin film transistors; zinc compounds; Schottky barrier; Schottky contact properties; ZnO; dual-gate structure; light-induced holes; light-irradiation; photo-leakage current reduction; thin-film transistors; Electric potential; Electrodes; Logic gates; Schottky barriers; Thin film transistors; Zinc oxide; Dual-gate; photo-leakage current; thin-film transistors (TFTs); zinc oxide;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2105459
