Zinc Oxide Thin-Film Transistors with Location-Controlled Crystal Grains Fabricated by Low-Temperature Hydrothermal Method

Author

Cheng, Huang-Chung ; Yang, Po-Yu ; Wang, Jyh-Liang ; Agarwal, Sanjay ; Tsai, Wei-Chih ; Wang, Shui-Jinn ; Lee, I-Che

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

32

Issue

4

fYear

2011

fDate

4/1/2011 12:00:00 AM

Firstpage

497

Lastpage

499

Abstract

High-performance zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) with a single vertical grain boundary in the channel have been successfully fabricated by a novel low-temperature (i.e., 85°C) hydrothermal method. The ZnO active channel was laterally grown with an aluminum-doped ZnO seed layer underneath the Ti/Pt film. Consequently, such BG-TFTs (W/L = 250 μm/10 μm) demonstrated the high field-effect mobility of 9.07 cm²/V - s, low threshold voltage of 2.25 V, high on/off-current ratio above 10⁶, superior current drivability, indistinct hysteresis phenomenon, and small standard deviations among devices, attributed to the high-quality ZnO channel with the single grain boundary.

Keywords

platinum; thin film transistors; titanium; zinc compounds; Ti-Pt; ZnO; bottom-gate thin-film transistors; current drivability; indistinct hysteresis phenomenon; location-controlled crystal grains; low-temperature hydrothermal method; single vertical grain boundary; size 10 mum; size 250 mum; temperature 85 degC; voltage 2.25 V; Grain boundaries; Iron; Logic gates; Thin film transistors; Zinc oxide; Hydrothermal method; lateral grain growth; thin-film transistor (TFT); zinc oxide (ZnO);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2103921

Filename

5713228