Title :
RF circuit design aspects of spiral inductors on silicon
Author :
Burghartz, Joachim N. ; Edelstein, D.C. ; Soyuer, Mehmet ; Ainspan, H.A. ; Jenkins, Keith A.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
12/1/1998 12:00:00 AM
Abstract :
The design and optimization of spiral inductors on silicon substrates, the related layout issues in integrated circuits, and the effect of the inductor-Q an the performance of radio-frequency (RF) building blocks are discussed. Integrated spiral inductors with inductances of 0.5-100 nH and Q´s up to 40 are shown to be feasible in very-large-scale-integration silicon technology. Circuit design aspects, such as a minimum inductor area, the cross talk between inductors, and the effect of a substrate contact on the inductor characteristics are addressed. Important RF building blocks, such as a bandpass filter, low-noise amplifier, and voltage-controlled oscillator are shown to benefit substantially from an improved inductor-Q
Keywords :
Q-factor; VLSI; crosstalk; elemental semiconductors; inductors; integrated circuit layout; silicon; Q-factor; RF circuit design; Si; VLSI technology; bandpass filter; crosstalk; inductance; integrated circuit layout; low noise amplifier; minimum area; optimization; radiofrequency building block; silicon substrate; spiral inductor; substrate contact; voltage controlled oscillator; Circuit synthesis; Design optimization; Inductors; Integrated circuit layout; Integrated circuit technology; Radio frequency; Radiofrequency integrated circuits; Silicon; Spirals; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of
