A 3.5-mW, 2.5-GHz diversity receiver and a 1.2-mW, 3.6-GHz VCO in silicon on anything

Author

Baltus, P.G.M. ; Wagemans, A.G. ; Dekker, R. ; Hoogstraate, A. ; Maas, H. ; Tombeur, A. ; van Sinderen, J.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

Volume

33

Issue

12

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2074

Lastpage

2079

Abstract

In this paper, first results of radio-frequency (RF) circuits processed in a novel silicon bipolar technology called silicon on anything (SOA) are presented. This technology was developed with the application of low-power, high-frequency circuits in mind. Three test ICs are discussed: a fully integrated 3.6-GHz voltage-controlled oscillator, a fully integrated 2.5-GHz diversity receiver front end, and an intermediate-frequency IC containing channel selectivity and demodulation circuits. Measurement results show that using this technology, significant power savings are possible for RF circuits

Keywords

MMIC oscillators; UHF integrated circuits; bipolar MMIC; demodulators; diversity reception; elemental semiconductors; radio receivers; silicon; 1.2 mW; 2.5 GHz; 3.5 mW; 3.6 GHz; RF ICs; SHF VCO; SOA technology; Si; UHF diversity receiver; channel selectivity; demodulation circuits; intermediate-frequency IC; radiofrequency circuits; receiver front end; silicon bipolar technology; silicon on anything technology; voltage-controlled oscillator; Circuit testing; Demodulation; Integrated circuit measurements; Integrated circuit technology; Integrated circuit testing; Power measurement; Radio frequency; Semiconductor optical amplifiers; Silicon; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.735549

Filename

735549