DocumentCode :
1449916
Title :
Multiferroic Properties of Hexagonal YbMnO 
Thin Films
Author :
Han, T.C. ; Lin, J.G.
Author_Institution :
Dept. of Appl. Phys., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
Volume :
45
Issue :
10
fYear :
2009
Firstpage :
4265
Lastpage :
4267
Abstract :
The hexagonal (HX) YbMnO3 thin films were synthesized on the substrates of (111)Y2O3:ZrO2 and (111)Pt/(0001)Al2O3 by pulsed laser deposition (PLD), and their structural, magnetic, and electrical properties are measured. The temperature-dependent magnetization clearly displays an antiferromagnetic ordering near 80 K with field perpendicular to the film surface. In the curve of polarization-voltage, the HX-YbMnO3 thin films show distinct ferroelectricity with the room-temperature remanent polarization and coercive field being 1.1 muC/cm2 and 58 kV/cm, respectively. These results indicate that the HX-YbMnO3 thin films are prominent candidates for the applications of multiferroic devices.
Keywords :
antiferromagnetic materials; coercive force; dielectric polarisation; ferroelectric thin films; magnetic thin films; multiferroics; pulsed laser deposition; ytterbium compounds; (111)Pt-(0001)Al2O3; (111)Y2O3:ZrO2; PLD; Pt-Al2O3; Y2O3:ZrO2; YbMnO3; antiferromagnetic ordering; coercive field; electrical properties; ferroelectricity; hexagonal thin films; magnetic properties; magnetization; multiferroics; pulsed laser deposition; remanent polarization; structural properties; Hexagonal; YbMnO $_{3}$ ; manganites; multiferroics;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2009.2023423
Filename :
5257118
Link To Document :
