Title :
A 3.3-V, 500-Mb/s/ch parallel optical receiver in 1.2-μm GaAs technology
Author :
Yang, Jungwook ; Choi, Joongho ; Kuchta, Daniel M. ; Stawiasz, Kevin G. ; Pepeljugoski, Petar ; Ainspan, H.A.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
12/1/1998 12:00:00 AM
Abstract :
A 20-channel parallel optical receiver has been developed that achieves the data transfer rate of 1 GByte/s. Each channel takes a dc-coupled optical input and can be driven by a 250 MHz clock to have a data rate of 500 Mb/s/channel. This parallel optical receiver IC is an integral part of a low cost optical bus technology which was demonstrated to be cost competitive with copper interconnect technology. The power supply is 3.3 V to be compatible with system supply. The control inputs are CMOS logic compatible and data outputs are compatible with IEEE low-voltage differential signals. The chip has been fabricated in a 1.2 μm GaAs MESFET technology
Keywords :
III-V semiconductors; MESFET integrated circuits; gallium arsenide; integrated optoelectronics; optical receivers; 1 Gbyte/s; 1.2 micron; 250 MHz; 3.3 V; 500 Mbit/s; DC coupling; GaAs; GaAs MESFET IC; OEIC; data transfer rate; optical bus; optical interconnect; parallel optical receiver; CMOS technology; Clocks; Copper; Costs; Gallium arsenide; Optical interconnections; Optical receivers; Photonic integrated circuits; Power supplies; Power system interconnection;
Journal_Title :
Solid-State Circuits, IEEE Journal of
