• DocumentCode
    1450189
  • Title

    Highly linear CMOS triode transconductor for VHF applications

  • Author

    Jendernalik, W. ; Szczepanski, S. ; Koziel, Slawomir

  • Author_Institution
    Fac. of Electron., Telecommun. & Inf., Gdansk Univ. of Technol., Gdańsk, Poland
  • Volume
    6
  • Issue
    1
  • fYear
    2012
  • fDate
    1/1/2012 12:00:00 AM
  • Firstpage
    9
  • Lastpage
    18
  • Abstract
    A high-speed, fully balanced complementary-symmetry metal-oxide-semiconductor (CMOS) triode transconductor is presented. The proposed approach exploits a pseudo-differential-pair triode configuration with a simple adaptive circuit stabilising the drain-to-source voltages of metal-oxide-semiconductor (MOS) transistors. Since no additional active circuits (apart from the resistors made of the cut-off MOS devices) and no feedback loop are used, linearisation improvement is obtained without compromising bandwidth and power consumption. The non-linearity because of the mobility degradation is also compensated. The transconductance of the proposed transconductor can be up to several times higher than for the classical topologies with no extra power consumption. As an example, the transconductor is used to design sixth-order elliptic band-pass filter in the very-high-frequency (VHF) range, simulated in a 0.35 m CMOS process (AMS).
  • Keywords
    CMOS integrated circuits; MOSFET; triodes; MOS transistors; VHF applications; active circuits; adaptive circuit; complementary-symmetry metal-oxide-semiconductor triode transconductor; drain-to-source voltages; feedback loop; highly linear CMOS triode transconductor; metal-oxide-semiconductor transistors; mobility degradation; power consumption; pseudo-differential-pair triode configuration; sixth-order elliptic band-pass filter; size 0.35 mum;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices & Systems, IET
  • Publisher
    iet
  • ISSN
    1751-858X
  • Type

    jour

  • DOI
    10.1049/iet-cds.2011.0138
  • Filename
    6153160