DocumentCode
1450189
Title
Highly linear CMOS triode transconductor for VHF applications
Author
Jendernalik, W. ; Szczepanski, S. ; Koziel, Slawomir
Author_Institution
Fac. of Electron., Telecommun. & Inf., Gdansk Univ. of Technol., Gdańsk, Poland
Volume
6
Issue
1
fYear
2012
fDate
1/1/2012 12:00:00 AM
Firstpage
9
Lastpage
18
Abstract
A high-speed, fully balanced complementary-symmetry metal-oxide-semiconductor (CMOS) triode transconductor is presented. The proposed approach exploits a pseudo-differential-pair triode configuration with a simple adaptive circuit stabilising the drain-to-source voltages of metal-oxide-semiconductor (MOS) transistors. Since no additional active circuits (apart from the resistors made of the cut-off MOS devices) and no feedback loop are used, linearisation improvement is obtained without compromising bandwidth and power consumption. The non-linearity because of the mobility degradation is also compensated. The transconductance of the proposed transconductor can be up to several times higher than for the classical topologies with no extra power consumption. As an example, the transconductor is used to design sixth-order elliptic band-pass filter in the very-high-frequency (VHF) range, simulated in a 0.35 m CMOS process (AMS).
Keywords
CMOS integrated circuits; MOSFET; triodes; MOS transistors; VHF applications; active circuits; adaptive circuit; complementary-symmetry metal-oxide-semiconductor triode transconductor; drain-to-source voltages; feedback loop; highly linear CMOS triode transconductor; metal-oxide-semiconductor transistors; mobility degradation; power consumption; pseudo-differential-pair triode configuration; sixth-order elliptic band-pass filter; size 0.35 mum;
fLanguage
English
Journal_Title
Circuits, Devices & Systems, IET
Publisher
iet
ISSN
1751-858X
Type
jour
DOI
10.1049/iet-cds.2011.0138
Filename
6153160
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