Title :
Kink-free polycrystalline silicon double-gate elevated-channel thin-film transistors
Author :
Kumar, Anish K P ; Sin, Johnny K O ; Nguyen, Cuong T. ; Ko, Ping K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong
fDate :
12/1/1998 12:00:00 AM
Abstract :
The authors report the characterization and analysis of a novel double-gate elevated-channel thin-film transistor (ECTFT) fabricated using polycrystalline silicon. The transistor has a thin channel and thick source/drain regions with a double-gate control. Using this structure, the kink effect in the I-V characteristics of a conventional TFT is completely eliminated, and leakage current at zero gate bias is reduced by over 15 times. The elimination of the kink effect and the significant reduction in leakage current are obtained due to the reduction in lateral electric field at the channel/drain junction region. Two-dimensional (2-D) device simulations are used to study the electric field reduction mechanism in the structure. Experimental results on the forward conduction and gate transfer characteristics of the structure are also presented
Keywords :
MOSFET; chemical mechanical polishing; electric fields; elemental semiconductors; leakage currents; semiconductor device models; silicon; thin film transistors; 2D device simulations; AMLCD; CMP; Si; active matrix LCD; characterization; double-gate elevated-channel TFT; forward conduction; gate transfer characteristics; kink effect; kink-free I-V characteristics; lateral electric field reduction; leakage current reduction; polycrystalline Si; polysilicon TFT; thick source/drain regions; thin channel; Active matrix liquid crystal displays; Active matrix technology; Circuits; Electrodes; Leakage current; Silicon compounds; Thickness control; Thin film devices; Thin film transistors; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
