IGBT dynamics for clamped inductive switching

Author

Trivedi, Malay ; Shenai, Krishna

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA

Volume

45

Issue

12

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2537

Lastpage

2545

Abstract

Clamped inductive switching performance of insulated gate bipolar transistors (IGBTs) have been studied in detail with the aid of extensive measurements and numerical simulations. Internal dynamics of a latch-up free punch-through IGBT during clamped inductive switching is studied using two-dimensional (2-D) mixed device and circuit simulations incorporating the self-heating mechanism. Failure of IGBT during inductive load turn-off is shown to occur due to thermally assisted carrier multiplication at the reverse biased p-base n-drift region junction under the emitter contact

Keywords

failure analysis; insulated gate bipolar transistors; power semiconductor switches; power transistors; semiconductor device models; semiconductor device reliability; 2D mixed device/circuit simulations; IGBT dynamics; IGBT failure; clamped inductive switching; emitter contact; insulated gate bipolar transistors; latch-up free punch-through device; reverse biased p-base n-drift region junction; self-heating mechanism; switching performance; thermally assisted carrier multiplication; Circuit optimization; Circuit simulation; Circuit testing; Insulated gate bipolar transistors; Manufacturing; Numerical simulation; Switches; Switching circuits; Thermal loading; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.735732

Filename

735732