Title :
A novel hetero-material gate (HMG) MOSFET for deep-submicron ULSI technology
Author :
Zhou, Xing ; Long, Wei
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
fDate :
12/1/1998 12:00:00 AM
Abstract :
A novel hetero-material gate MOSFET intended for integration into the existing deep-submicron silicon technology is proposed and simulated. It is shown that by adding a layer of material with a larger workfunction to the source side of the gate, short-channel effects can be greatly suppressed without degrading the driving ability. The threshold voltage roll-off can be compensated and tuned by controlling the length of this second gate. The new structure has great potential in breaking the barrier of deep-suhmicron MOSFET´s scaling beyond 0.1 μm technologies
Keywords :
CMOS integrated circuits; MOS integrated circuits; MOSFET; ULSI; semiconductor device models; work function; 0.1 micron; HMG-MOSFET; MOSFET scaling; Si; Si technology; deep-submicron ULSI technology; hetero-material gate MOSFET; short-channel effects suppression; threshold voltage roll-off compensation; work function; CMOS technology; Degradation; MOSFET circuits; Medical simulation; Semiconductor process modeling; Silicon; Space technology; Threshold voltage; Transconductance; Ultra large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
