Title :
Improved stability of short-channel hydrogenated N-channel polycrystalline silicon thin-film transistors with very thin ECR N2O-plasma gate oxide
Author :
Jin-Woo Lee ; Nae-In Lee ; Chul-Hi Han
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
Stability has been investigated for short-channel hydrogenated n-channel polycrystalline thin-film transistors (poly-Si TFTs) with very thin (12 nm) electron cyclotron resonance (ECR) N2O-plasma gate oxide. The TFTs show negligible changes in the electrical characteristics after hot-carrier stresses, which is due to the highly reliable interface and gate oxide. The hydrogenated TFTs with 3-μm gate length TFTs exhibit very small degradation (/spl Delta/V/sub th/<15 mV) under hot-carrier stresses and Fowler-Nordheim (F-N) stress (/spl Delta/V/sub th/=/sub 81/ mV, /spl Delta/Gm/Gm=2.2%, /spl Delta/S/S=4.7%).
Keywords :
elemental semiconductors; hot carriers; hydrogenation; oxidation; plasma materials processing; silicon; thin film transistors; ECR N/sub 2/O plasma oxidation; Fowler-Nordheim stress; N/sub 2/O; Si:H; electrical characteristics; gate oxide; hot carrier stress; polycrystalline silicon thin film transistor; short-channel hydrogenated N-channel polysilicon TFT; stability; Degradation; Oxidation; Plasma displays; Plasma stability; Plasma temperature; Semiconductor thin films; Silicon; Stress; Thin film transistors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
