Impact of E-E scattering to the hot carrier degradation of deep submicron NMOSFETs

The hot carrier degradation of short channel NMOSFETs (L/sub EFF/=0.07-0.10 μm) stressed at 2.0 V/spl les/V/sub DS//spl les/2.9 V and a wide V/sub GS/ range is shown NOT to obey the classic hot carrier "lucky electron model". In the low and mid V/sub GS/ range, the degradation behavior is better described by an effective electron temperatures model proposed here, which takes e-e scattering effects into account. In the high V/sub GS/ regime, a further lifetime reduction can be qualitatively explained within this model by the increase in electron concentration at the Si-SiO₂ interface near the drain region.