Improved uniformity of contact resistance in GaAs MESFET using Pd/Ge/Ti/Au ohmic contacts

Author

Kwak, Joon Seop ; Lee, Jong-Lam ; Baik, Hong Koo

Author_Institution

Dept. of Metall. Eng., Yonsei Univ., Seoul, South Korea

Volume

19

Issue

12

fYear

1998

Firstpage

481

Lastpage

483

Abstract

Improved contact resistance uniformity, with a low resistance on high-low doped GaAs MESFET, was demonstrated using a Pd/Ge/Ti/Au ohmic contact. The lowest contact resistivity obtained was 2.8/spl times/10/sup -6/ /spl Omega/-cm/sup 2/. The average value and standard deviation (/spl Delta/Rc) of the contact resistance (Rc) were 0.73 and 0.07 /spl Omega/-mm, respectively, which were more uniform than those for AuGe/Ni contacts with an average Rc of 0.77 /spl Omega/-mm and /spl Delta/Rc of 0.16 /spl Omega/-mm. The improved uniformity was attributed to the uniform penetration of the ohmic junction into the buried high-doped channel layer by solid-state reactions, resulting in the improved uniformity of device performance.

Keywords

III-V semiconductors; Schottky gate field effect transistors; contact resistance; gallium arsenide; germanium; gold; ohmic contacts; palladium; titanium; GaAs; Pd-Ge-Ti-Au; Pd/Ge/Ti/Au ohmic contact; buried channel layer; contact resistance; high-low doped GaAs MESFET; solid-state reaction; Annealing; Cellular phones; Conductivity; Contact resistance; Gallium arsenide; Gold; MESFETs; Ohmic contacts; Solid state circuits; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.735753

Filename

735753